直流反応性スパッタ法による Cd-Sn 酸化物透明導電膜

概要

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High conductive, transparent films of Cd-Sn oxide have been prepared by dc diode reactive sputtering of Cd-Sn alloys in Ar-O_2 mixtures. Alloy targets (Cd/Sn atomic ratio of 2 : 1) were utilized. Experiments have been carried out under the following conditions. The ratio of Ar/O_2 and the total pressure of gas mixture were ranged from 9/1 to 4/1,and from 1×(10)^<-2> to 6×(10)^<-2> Torr, respectively. The dc applied voltage was in the range of 1∿3kV. The deposition rate of oxide films on glass or NaCl substrate was in the range of 5∿60A/min. By the measurements of electrical resistances and optical transmissions, it was found that the properties of films greatly depended upon both the ratio of O_2 to Ar and O_2 partial pressure. Typical sputtered films with sheet resistance of 40 ohms/square, 85% light transmission at 500nm have been achieved under the conditions of O_2 partial pressure range of 0.6 to 1.0×(10)^<-2> Torr. The lowest resistivity was 1.2×(10)^<-3> ohm-cm. Conductivity measurements in the temperature range from room temperature to 77°K indicated that the films were degenerate.