<論説>ポーラスシリコンのフォトルミネッサンス
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概要
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We have studied the photoluminescence (PL) of porous silicon (PS) layers formed on p-type Si wafers by electrochemical anodization in HF solutions. Broad PL spectra were observed from 560 to 880nm with the peak at about 700nm. A high pressure mercury-vapor lamp was used for a light source of the PL. AFM (atomic force microscope) and SEM(scanning electron microscope) micrographs of PS layers are shown for the PS structure.
- 神戸市立工業高等専門学校の論文
- 1995-02-28