Enhanced Emission Efficiency of GaN-Based Flip-Chip Light-Emitting Diodes by Surface Plasmons in Silver Disks
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概要
- 論文の詳細を見る
- 2012-12-25
著者
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Hong Sang-Hyun
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
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Lee Sang-Jun
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
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Yim Sang-Youp
Advanced Photonics Research Institute, GIST, Gwangju 500-712, Korea
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Lee Kwang
School of Computer Aided Science, Inje University, Kimhae 621-749, Korea
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CHO Chu-Young
School of Materials Science and Engineering, Gwangju Institute of Science and Technology
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PARK Seong-Ju
School of Materials Science and Engineering, Gwangju Institute of Science and Technology
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KIM Jae-Joon
Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology
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LEE Sang-Jun
School of Materials Science and Engineering, Gwangju Institute of Science and Technology
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HONG Sang-Hyun
School of Materials Science and Engineering, Gwangju Institute of Science and Technology
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- Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop
- Power Dependent Micro-Photoluminescence of Green-InGaN/GaN Multiple Quantum Wells
- Improved Light Extraction Efficiency in Blue Light-Emitting Diodes by SiO₂-Coated ZnO Nanorod Arrays
- Enhanced Emission Efficiency of GaN-Based Flip-Chip Light-Emitting Diodes by Surface Plasmons in Silver Disks
- Improved Light Extraction Efficiency in Blue Light-Emitting Diodes by SiO_2-Coated ZnO Nanorod Arrays