Improved Performance of GaN-Based Light-Emitting Diodes via AlInGaN/InGaN Electron-Emitting Layer
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概要
- 論文の詳細を見る
- 2012-11-25
著者
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Wu Zhihao
Wuhan National Laboratory For Optoelectronics Huazhong University Of Science And Technology
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Chen Changqing
Wuhan National Laboratory For Optoelectronics Huazhong University Of Science And Technology
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Zhang Wei
Wuhan National Laboratory For Optoelectronics School Of Optoelectronic Science And Engineering Huazh
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XU Jin
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
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ZHANG Jianbao
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
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LI Yang
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
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XIONG Hui
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
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TIAN Yu
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
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DAI Jiangnan
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
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FANG Yanyan
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
関連論文
- Comparative Study on Several Blind Deconvolution Algorithms Applied to Underwater Image Restoration
- Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates
- Improved Performance of GaN-Based Light-Emitting Diodes via AlInGaN/InGaN Electron-Emitting Layer