Epitaxial Growth of ZnO/InN Core/Shell Nanostructures for Solar Cell Applications
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概要
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We demonstrated epitaxial growth of ZnO-core and InN-shell nanostructures on (11\bar{2}0) Al2O3 substrate via metal organic chemical vapor deposition. Transmission electron microscopy and energy dispersion spectroscopy results showed that the epitaxially aligned ZnO/InN core/shell nanorods were successfully grown on the A-sapphire substrate. These ZnO/InN core/shell nanostructures could be employed in solar cell applications due to the improvement in the absorption efficiency of light as seen in Lumerical finite-difference time-domain (FDTD) simulations.
- 2012-10-25
著者
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YEON Seunghwan
Department of Electronics and Computer Engineering, Hanyang University
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PARK Jinsub
Department of Electronic Engineering, Hanyang University
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SON Taejoon
Department of Electronics and Computer Engineering, Hanyang University
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Ryu Horyong
Department of Electronic Engineering, Hanyang University, Seoul 133-791, Republic of Korea
関連論文
- Growth of GaN Layer on Patterned Al/Ti Metal Mask by Metal-Organic Chemical Vapor Deposition
- Growth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar Microstructure
- Epitaxial Growth of ZnO/InN Core/Shell Nanostructures for Solar Cell Applications
- Growth of GaN Columns and Microstructures on (111) Si by Using Ge Layer via Metal Organic Chemical Vapor Deposition