Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

スポンサーリンク

概要

• 論文の詳細を見る

• In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTDs) with spin-splitting under zero magnetic fields. The InSb has very small effective mass, thus we can obtain large spin-splitting by Rashba spin-orbit interaction due to asymmetric InSb/AlInSb quantum wells. In our model, broadening of each resonant tunneling level and spin-splitting energy can be considered to calculate spin-polarized resonant tunneling current.

• 2012-05-01

著者

• Suhara Michihiko

  Tokyo Metropolitan Univ.

• SAITO Mitsufumi

  Tokyo Metropolitan University

• FUJITA Masanari

  Tokyo Metropolitan University

関連論文

• Demultiplexing Property Owing to a Composite Right/Left-Handed Transmission Line with Leaky Wave Radiation toward Functional Wireless Interconnects
• Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors
• Implementation of Physics-Based Model for Current-Voltage Characteristics in Resonant Tunneling Diodes by Using the Voigt Function
• Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes
• Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

スポンサーリンク