Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes
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概要
- 論文の詳細を見る
Tunnel diodes are some of 2-port devices with negative differential resistance (NDR). In this paper, we propose a low insertion loss isolator, which can be designed to operate up to sub-millimeter region, by using resonant tunneling diodes (RTDs) and a HEMT. Small-signal analyses are performed to confirm insertion loss and unidirectional characteristics for the proposed active isolator. It is found that unidirectional amplifications as well as isolation characteristics could be expected below sub-millimeter waveband as a result of numerical calculations.
- （社）電子情報通信学会の論文
- 2011-05-01
著者
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Tanaka Nobuhiko
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Suhara Michihiko
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Suhara Michihiko
Tokyo Metropolitan Univ.
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Saito Mitsufumi
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Tanaka Nobuhiko
Tokyo Metropolitan University
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SAITO Mitsufumi
Tokyo Metropolitan University
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