Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM

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概要

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• The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.

• 2012-05-01

著者

• Norifusa Yuto

  Cir Tohoku University

• Endoh Tetsuo

  Cir Tohoku Univ.

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• Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM

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