A Self-Aligned InGaAs Quantum-Well Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

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概要

• 論文の詳細を見る
• 2012-06-25

著者

• Kim Tae-woo

  Massachusetts Institute Of Technology

• Antoniadis Dimitri

  Massachusetts Institute Of Technology

• LIN Jianqiang

  Massachusetts Institute of Technology

• DEL ALAMO

  Massachusetts Institute of Technology

• Alamo Jesús

  Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.

関連論文

• Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel High Electron Mobility Transistors
• A Self-Aligned InGaAs Quantum-Well Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

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