Design of 65 nm Sub-Threshold SRAM Using the Bitline Leakage Prediction Scheme and the Non-trimmed Sense Amplifier
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概要
- 論文の詳細を見る
- 2012-01-01
著者
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Wang Jinn-shyan
Dept. Of Electrical Engineering Chung-cheng University
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Lin Chi-chang
Chung-cheng University
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CHANG Pei-Yao
Dept. of Electrical Engineering, Chung-Cheng University
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Chang Pei-yao
Dept. Of Electrical Engineering Chung-cheng University
関連論文
- Design of High-Performance CMOS Level Converters Considering PVT Variations
- Design of 65 nm Sub-Threshold SRAM Using the Bitline Leakage Prediction Scheme and the Non-trimmed Sense Amplifier