Structure and Optical Properties of InGaAsBi with up to 7% Bismuth
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2012-01-25
著者
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Baranov Alexei
Institut D'electronigue Du Sud Umr5214 Cnrs/universite Montpellier 2
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DEVENSON Jan
Department of Optoelectronics, Center for Physical Sciences and Technology
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PACEBUTAS Vaidas
Department of Optoelectronics, Center for Physical Sciences and Technology
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BUTKUTE Renata
Department of Optoelectronics, Center for Physical Sciences and Technology
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KROTKUS Arunas
Department of Optoelectronics, Center for Physical Sciences and Technology
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Butkute Renata
Department Of Optoelectronics Center For Physical Sciences And Technology
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Krotkus Arunas
Department Of Optoelectronics Center For Physical Sciences And Technology
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Pacebutas Vaidas
Department Of Optoelectronics Center For Physical Sciences And Technology
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Devenson Jan
Department Of Optoelectronics Center For Physical Sciences And Technology