Proton induced single event upset cross section prediction for 0.15μm six-transistor (6T) silicon-on-insulator static random access memories
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概要
- 論文の詳細を見る
- 2012-04-01
著者
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Li Lei
Research Institute Of Electronic Science And Technology University Of Electronic Science And Technology Of China
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ZHOU Wanting
Research Institute of Electronic Science and Technology, University of Electronic Science and Technology of China
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LIU Huihua
Research Institute of Electronic Science and Technology, University of Electronic Science and Technology of China
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Liu Huihua
Research Institute Of Electronic Science And Technology University Of Electronic Science And Technology Of China
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Zhou Wanting
Research Institute Of Electronic Science And Technology University Of Electronic Science And Technology Of China
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- Proton induced single event upset cross section prediction for 0.15μm six-transistor (6T) silicon-on-insulator static random access memories
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