Design of High-Performance Analog Circuits Using Wideband g_m-Enhanced MOS Composite Transistors

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概要

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• In this paper, we present a new composite transistor circuit design technique that provides superior performance enhancement to analog circuits. By adding a composite transistor to the cascode-compensated amplifier, it has achieved a 102dB DC gain, and a 37.6MHz unity gain bandwidth while driving a 2nF heavy capacitive load at a single 1.8V supply. In the comparison of power-bandwidth and power-speed efficiencies on figures of merit, it offers significantly high values with respect to the reported state-of-the-art works. By employing the composite transistor in a linear regulator powered by a 3.3V supply to generate a 1.8V output voltage, it has shown fast recovery response at various load current transients, having a 1% settling time of 0.1µS for a 50mA or 100mA step, while a 1% settling time of 0.36µS for a maximum 735mA step under a capacitive load of 10µF with a 1Ω ESR resistor. The simulated load regulation is 0.035% and line regulation is 0.488%. Comparing its results with other state-of-art LDO reported results, it also validates the significant enhanced performance of the proposed composite-transistor-based design in terms of speed, current driving capability and stability against changes in environmental parameters. All the proposed designs are simulated using chartered semiconductor (CSM) 1.8V/3.3V 0.18µm CMOS triple-well process technology with thin/thick oxide options and BSIM3 model parameters.

• （社）電子情報通信学会の論文
• 2010-07-01

著者

• TIAN Yang

  Temasek Laboratories, Nanyang Technological University

• Chan Pak

  School Of Electrical And Electronic Engineering Nanyang Technological University

• Tian Yang

  Temasek Laboratories Nanyang Technological University

• Chan Pak

  School Of Electrical And Electronic Engineering Nanyang Technological Univ.

• CHAN Pak

  School of Electrical & Electronic Engineering, Nanyang Technological University

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