Fabrication of Ga_2O_3 thin films by aqueous solution deposition
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概要
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Ga2O3 thin films were fabricated using the Ga nitrate and GaOOH aqueous solutions. The films were crystallized as β-Ga2O3 phase by heating at 700°C and the band gap of resultant films was about 4.9 eV. The films were uniform and the film from Ga nitrate solution was dense with porosity of about 3%. The resistivity of the blank film was about 107 Ω cm. The doped films with Ti and Zr exhibited rectifying properties on ITO sputtered glass substrate.
- 公益社団法人 日本セラミックス協会の論文
- 2009-09-01
著者
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OHYA Yutaka
Department of Applied Chemistry, Faculty of Engineering, Gifu University
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Ohya Yutaka
Department Of Materials Science And Technology Faculty Of Engineering Gifu University
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Ohya Yutaka
Department Of Applied Chemistry Faculty Of Engineering Gifu University
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BAN Takayuki
Department of Chemistry, Faculty of Engineering, Gifu University
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Ban Takayuki
Department Of Chemistry Faculty Of Engineering Gifu University
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Ban Takayuki
Department Of Materials Science And Technology Faculty Of Engineering Gifu University
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OKANO Jyunya
Department of Materials Science and Technology, Faculty of Engineering, Gifu University
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KASUYA Yuki
Department of Materials Science and Technology, Faculty of Engineering, Gifu University
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Kasuya Yuki
Department Of Materials Science And Technology Faculty Of Engineering Gifu University
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Okano Jyunya
Department Of Materials Science And Technology Faculty Of Engineering Gifu University
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