Dominant Failure Mechanism in Data Retention Characteristics of Resistance Change Memory Consisting of NiO at High Temperature
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the dependence of data retention characteristics of a resistance change memory (RCM) consisting of NiO on bottom electrode material, Pt/Ti and Pt/TiO2. Data retention time was longer in Pt/NiO/Pt/Ti/SiO2 structures compared with that in Pt/NiO/Pt/TiO2/SiO2 structures. A secondary ion mass spectrometry profile suggested that this improvement in data retention time was a result of the thin TiO2 layer formed by Ti atoms diffusing to the boundary between the NiO layer and the Pt bottom electrode. In addition, the formation of a leakage path outside the filament, in which the resistance switching and memory effect occur, is suggested to be a predominant failure mechanism in data retention characteristics of NiO-RCM against heat.
- Japan Society of Applied Physicsの論文
- 2008-12-25
著者
-
Aoki Masaki
Embedded Memories Development Department Fujitsu Laboratories Ltd.
-
Tsunoda Koji
Embedded Memories Development Department Fujitsu Laboratories Ltd.
-
Kinoshita Kentaro
Embedded Memories Development Department, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsug
-
Okano Ayumi
Embedded Memories Development Department, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsug
-
Sugiyama Yoshihiro
Embedded Memories Development Department, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsug
-
Okano Ayumi
Embedded Memories Development Department Fujitsu Laboratories Ltd.
-
Sugiyama Yoshihiro
Embedded Memories Development Department Fujitsu Laboratories Ltd.
-
Kinoshita Kentaro
Embedded Memories Development Department Fujitsu Laboratories Ltd.
関連論文
- Dominant Failure Mechanism in Data Retention Characteristics of Resistance Change Memory Consisting of NiO at High Temperature
- Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides