Highly Reliable Cu Interconnect using Low Hydrogen Silicon Nitride Film Deposited at Low Temperature for Cu-Diffusion Barrier
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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ASAI K.
Process Technology Development Div., Renesas Technology Corporation
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KOJIMA M.
Process Technology Development Div., Renesas Technology Corporation
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Kono K.
Process Technology Development Division Renesas Technology Corporation
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MURATA T.
Process Technology Development Division, Renesas Technology Corporation
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TSUNEMINE Y.
Process Technology Development Division, Renesas Technology Corporation
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FUJISAWA M.
Process Technology Development Division, Renesas Technology Corporation
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MATSUURA M.
Process Technology Development Division, Renesas Technology Corporation
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Tsunemine Y.
Process Technology Development Division Renesas Technology Corporation
関連論文
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- Highly Reliable Cu Interconnect using Low Hydrogen Silicon Nitride Film Deposited at Low Temperature for Cu-Diffusion Barrier