Non-destructive extraction of width bias variations for deep sub-micron interconnect lines
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Chen David
Central R & D Division United Microelectronics Corp.
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YEH C
Central R & D Division, United Microelectronics Corp.
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CHIEN S
Central R & D Division, United Microelectronics Corp.
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TANG Mao-Chyuan
Central R & D Division, United Microelectronics Corp.
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WANG Meng-Feng
Central R & D Division, United Microelectronics Corp.
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CHENG Tim
Central R & D Division, United Microelectronics Corp.
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Wang Meng-feng
Central R & D Division United Microelectronics Corp.
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Tang Mao-chyuan
Central R & D Division United Microelectronics Corp.
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Yeh C
Central R & D Division United Microelectronics Corp.
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Chien S
Central R & D Division United Microelectronics Corp.
関連論文
- Effects of hot carriers on DC and RF performances of deep submicron PMOSFET for low-power and high frequency applications
- Non-destructive extraction of width bias variations for deep sub-micron interconnect lines