Top-view imaging of 65nm gate length metal-oxide-semiconductor field effect transistors by scanning capacitance microscopy

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• Ogiso H.

  National Institute Of Advanced Industrial Science And Technology (aist)

• NAITOU Y.

  National Institute of Advanced Industrial Science and Technology (AIST)

• ANDO A.

  National Institute of Advanced Industrial Science and Technology (AIST)

• KAMOHARA S.

  MIRAI-Selete

• YANO F.

  MIRAI-Selete

• NISHIDA A.

  MIRAI-Selete

• Kamiyama S.

  Mirai-selete

関連論文

• Top-view imaging of 65nm gate length metal-oxide-semiconductor field effect transistors by scanning capacitance microscopy
• Spatial Fluctuation of Electrical properties in Hf-Silicate Film Observed with Scanning Capacitance Microscopy

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