Defect Passivation by Hydrogen in Zinc Oxide Films Grown by MOCVD
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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JO Jungyol
Department of Electrical and Computer Engineering, Ajou University
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SEO Ogweon
NFC, Samsung Advanced Institute of Technology
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CHOI Hyoshik
Department of Electrical and Computer Engineering, Ajou University
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LEE Byeonggon
CDA Co., Ltd.
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Seo Ogweon
Nano Fabrication Technology Center Samsung Advanced Institute Of Technology
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Jo Jungyol
Department Of Electrical And Computer Engineering Ajou University
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Choi Hyoshik
Department Of Electrical And Computer Engineering Ajou University
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Lee Byeonggon
Cda Co. Ltd.
関連論文
- Defect Passivation by Hydrogen in Zinc Oxide Films Grown by MOCVD
- Modification of Silicon Optical Properties by 250keV Electron Irradiation
- Effect of Hydrogen in Zinc Oxide Thin-Film Transistor grown by MOCVD
- Enhancement-Mode ZnO Thin-Film Transistor Grown by Metalorganic Chemical Vapor Deposition
- Observation of Resonance by Individual Energy Lavels in InGaAs/AlAs Triple-Barrier Resonant Tunneling Diodes
- Comuparison of Breakdown Behavior in Electron-Irradiated and Proton-Irradiated Silicon pn Junctions
- Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition
- Modification of Silicon Optical Properties by 250 keV Electron Irradiation