Growth of III-V epitaxial material on Si Substrates for high-speed electronic applications
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
-
LUO G.
National Laboratory of Solid State Microstructures, Nanjing University
-
YANG T.
Department of Mechanical Engineering, National Pingtung University of Science and Technology
-
CHANG E.
Department of Materials Science and Engineering, National Chiao Tung University
-
Hsieh Y.
Department Of Materials Science And Engineering National Chiao Tung University
-
Luo G.
National Laboratory Of Solid State Microstructures Nanjing University
-
Luo G.
National Nano Devices Laboratories
関連論文
- Fabrication of LiNbO_3 Phase Gratings by Excimer Laser Ablation through a Silica Phase Mask
- Flow patterns and wall stresses in a moving granular filter bed with a curved symmetric louvered wall
- The effect of a flow corrective insert upon flow patterns and wall stresses in a two-dimensional bin-hopper
- Growth of InAs Channel HEMT Structure on Si substrate and It's Possible Application for Low Power Logic
- Growth of III-V epitaxial material on Si Substrates for high-speed electronic applications
- Laser Welding of 422 Stainless Steel with Inconel 625 Filler Metal
- Assessment of Closed Vessel Digestion Methods for Elemental Determination of Airborne Particulate Matter by ICP-AES
- Excess Fluoride Interferes with Chloride-channel-dependent Endocytosis in Ameloblasts
- Effect of Sn on the Superconductivity of the DyBa2Cu3O7-δ System