A 77GHz T/R MMIC One-Chip Set Fabricated by a 0.15μm GaAs mHEMT Technology
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
-
Kang Dong
Inp Ic Team It Convergence & Components Laboratory
-
HONG Ju
InP IC Team, IT Convergence & Components Laboratory
-
SHIM Jae
InP IC Team, IT Convergence & Components Laboratory
-
YOON Hyung
InP IC Team, IT Convergence & Components Laboratory
-
LEE Kyung
InP IC Team, IT Convergence & Components Laboratory
-
Lee Kyung
Inp Ic Team It Convergence & Components Laboratory
-
Hong Ju
Inp Ic Team It Convergence & Components Laboratory
-
Shim Jae
Inp Ic Team It Convergence & Components Laboratory
-
Yoon Hyung
Inp Ic Team It Convergence & Components Laboratory
関連論文
- 80nm T-Shaped Gate Metamorphic HEMTs fabricated Using Two-Step Gate Recess Process
- A 77GHz T/R MMIC One-Chip Set Fabricated by a 0.15μm GaAs mHEMT Technology
- Extremely Low Noise Characteristics of 0.15μm Power Metamorphic HEMT