Extremely Low Noise Characteristics of 0.15μm Power Metamorphic HEMT
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Kang Dong
Inp Ic Team It Convergence & Components Laboratory
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SHIM Jae
InPIC Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute
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YOON Hyung
InPIC Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute
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KANG Dong
InPIC Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute
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HONG Ju
InPIC Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute
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LEE Kyung
InPIC Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute
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Lee Kyung
Inp Ic Team It Convergence & Components Laboratory
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Hong Ju
Inp Ic Team It Convergence & Components Laboratory
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Shim Jae
Inp Ic Team It Convergence & Components Laboratory
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Yoon Hyung
Inp Ic Team It Convergence & Components Laboratory
関連論文
- 80nm T-Shaped Gate Metamorphic HEMTs fabricated Using Two-Step Gate Recess Process
- A 77GHz T/R MMIC One-Chip Set Fabricated by a 0.15μm GaAs mHEMT Technology
- Extremely Low Noise Characteristics of 0.15μm Power Metamorphic HEMT