NBT Stress Induced Anomalous Drain Current Instability in HfSiON pMOSFETs Arising from Bipolar Charge Trapping
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Wang Tahui
Dept. Of Electronics Engineering National Chiao-tung University
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TANG C.
Dept. of Electronics Engineering, National Chiao-Tung University
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MA H.
Dept. of Electronics Engineering, National Chiao-Tung University
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CHAN C.
Dept. of Electronics Engineering, National Chiao-Tung University
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WANG H.
Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park
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Tang C.
Dept. Of Electronics Engineering National Chiao-tung University
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Chan C.
Dept. Of Electronics Engineering National Chiao-tung University
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Wang H.
Taiwan Semiconductor Manufacturing Company Science-based Industrial Park
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- NBT Stress Induced Anomalous Drain Current Instability in HfSiON pMOSFETs Arising from Bipolar Charge Trapping
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