3D Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• Markov S.

  Eee Dept. Univ. Of Glasgow

• BROWN A.

  EEE Dept., Univ. of Glasgow

• CHENG B.

  EEE Dept., Univ. of Glasgow

• ROY G.

  EEE Dept., Univ. of Glasgow

• ROY S.

  EEE Dept., Univ. of Glasgow

• ASENOV A.

  EEE Dept., Univ. of Glasgow

• Asenov A.

  Eee Dept. Univ. Of Glasgow

• Roy S.

  Eee Dept. Univ. Of Glasgow

• Roy G.

  Eee Dept. Univ. Of Glasgow

• Cheng B.

  Eee Dept. Univ. Of Glasgow

関連論文

• 3D Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants
• Impact of Oxide Thickness Fluctuation on MOSFETs Gate Tunnelling

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