Impact of Oxide Thickness Fluctuation on MOSFETs Gate Tunnelling
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Markov S.
Eee Dept. Univ. Of Glasgow
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CHENG B.
EEE Dept., Univ. of Glasgow
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ASENOV A.
EEE Dept., Univ. of Glasgow
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CHENG B.
Device Modelling Group, Dept. of Electronics and Electrical Engineering University of Glasgow
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ROY S.
Device Modelling Group, Dept. of Electronics and Electrical Engineering University of Glasgow
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MARTIENZ A.
Device Modelling Group, Dept. of Electronics and Electrical Engineering University of Glasgow
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MARKOV S.
Device Modelling Group, Dept. of Electronics and Electrical Engineering University of Glasgow
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ASENOV A.
Device Modelling Group, Dept. of Electronics and Electrical Engineering University of Glasgow
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Asenov A.
Eee Dept. Univ. Of Glasgow
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Martienz A.
Device Modelling Group Dept. Of Electronics And Electrical Engineering University Of Glasgow
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Roy S.
Eee Dept. Univ. Of Glasgow
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Cheng B.
Eee Dept. Univ. Of Glasgow
関連論文
- 3D Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants
- Impact of Oxide Thickness Fluctuation on MOSFETs Gate Tunnelling