Simulation of Atomic Scale Effects and Fluctuations in Nano-Scale CMOS
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Brown Andrew
Device Modelling Group Department Of Electronics And Electrical Engineering The University Of Glasgo
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Asenov Asen
Device Modelling Group Department Of Electronics And Electrical Engineering The University Of Glasgo
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ROY Gareth
Device Modelling Group, Department of Electronics and Electrical Engineering The University of Glasg
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ALEXANDER Craig
Device Modelling Group, Department of Electronics and Electrical Engineering The University of Glasg
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MARTINEZ Antonio
Device Modelling Group, Department of Electronics and Electrical Engineering The University of Glasg
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Roy Gareth
Device Modelling Group Department Of Electronics And Electrical Engineering The University Of Glasgo
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Alexander Craig
Device Modelling Group Department Of Electronics And Electrical Engineering The University Of Glasgo
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Martinez Antonio
Device Modelling Group Department Of Electronics And Electrical Engineering The University Of Glasgo
関連論文
- Simulation of Atomic Scale Effects and Fluctuations in Nano-Scale CMOS
- RTS amplitudes in decanano n-MOSFETs with conventional and high-κ gate stacks