RTS amplitudes in decanano n-MOSFETs with conventional and high-κ gate stacks
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Brown Andrew
Device Modelling Group Department Of Electronics And Electrical Engineering The University Of Glasgo
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Brown Andrew
Device Modelling Group Dept. Of Electronics And Electrical Engineering University Of Glasgow
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Roy Scott
Device Modelling Group Dept. Of Electronics And Electrical Engineering University Of Glasgow
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Asenov Asen
Device Modelling Group Department Of Electronics And Electrical Engineering The University Of Glasgo
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Asenov Asen
Device Modelling Group Dept. Of Electronics And Electrical Engineering University Of Glasgow
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LEE Angelica
Device Modelling Group, Dept. of Electronics and Electrical Engineering University of Glasgow
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Lee Angelica
Device Modelling Group Dept. Of Electronics And Electrical Engineering University Of Glasgow
関連論文
- Simulation of Atomic Scale Effects and Fluctuations in Nano-Scale CMOS
- RTS amplitudes in decanano n-MOSFETs with conventional and high-κ gate stacks