A MOCVD TiSiN/Ta Barrier Metal for Improved EM Performance and Low Via/line Resistance using Direct Contact Via (DCV) Process for Sub-65nm Technology

スポンサーリンク

概要

論文の詳細を見る
2006-09-13

著者

関連論文

Highly Reliable Ring Type Contact Scheme for High Density PRAM
GST Confined Structure and Integration of 64Mb PRAM
A MOCVD TiSiN/Ta Barrier Metal for Improved EM Performance and Low Via/line Resistance using Direct Contact Via (DCV) Process for Sub-65nm Technology
A stress analysis of a mechanical joint for carbon composite rods
Fabrication of Mg_2 NiH_x from Mg and Ni Chips by Hydrogen Induced Planetary Ball Milling

スポンサーリンク