Realization of A Metal Split Gate by Gate Full Ni-Silicidation Process For MOSFET RF/Analog Applications

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• Yuan Jun

  Electron Microscopy Laboratory, Tsinghua University

• Yuan Jun

  Electrical Engineering Department University Of California

• Woo Jason

  Electrical Engineering Department University Of California

関連論文

• EELS and EDS fracture mode analysis at grain boundaries of Cr-Mo steel
• EELS and EDS Fracture Mode Analysis at Grain Boundaries of Cr-Mo Steel
• Realization of A Metal Split Gate by Gate Full Ni-Silicidation Process For MOSFET RF/Analog Applications
• A T-Gate MOSFET with Reduced Channel Length by Inverted Sidewalls for Sub-100nm RF Applications
• Characteristics of Germanium-on-Insulators Fabricated by Wafer Bonding and Hydrogen-Induced Layer Splitting

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