A T-Gate MOSFET with Reduced Channel Length by Inverted Sidewalls for Sub-100nm RF Applications

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Woo Jason

  Electrical Engineering Department University Of California

• TO Kun

  Electrical Engineering Department, University of California

• To Kun

  Electrical Engineering Department University Of California

関連論文

• Realization of A Metal Split Gate by Gate Full Ni-Silicidation Process For MOSFET RF/Analog Applications
• A T-Gate MOSFET with Reduced Channel Length by Inverted Sidewalls for Sub-100nm RF Applications
• Characteristics of Germanium-on-Insulators Fabricated by Wafer Bonding and Hydrogen-Induced Layer Splitting

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