Improvement of Linearity in Novel InGaAsN-based HEMTs
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Su Yan-kuin
National Chen Kung University Institute Of Microelectronics Department Of Electrical Engineering
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Su Yan-kuin
National Cheng Kung University Institute Of Microelectronics Department Of Electrical Engineering
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Chang Shoou-jinn
National Cheng Kung University Institute Of Microelectronics Department Of Electrical Engineering
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Wu Jynn-de
National Cheng Kung University Institute Of Microelectronics Department Of Electrical Engineering
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HSU Shuo-Hsien
National Cheng Kung University, Institute of Microelectronics, Department of Electrical Engineering
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Hsu Shuo-hsien
National Cheng Kung University Institute Of Microelectronics Department Of Electrical Engineering
関連論文
- Organic thin-film transistors with N2 treatment
- Improvement of Linearity in Novel InGaAsN-based HEMTs
- Improved performance of DB-PPV based Polymer Light Emitting Diodes by Thermal Annealing
- Interface Modification in Organic Thin Film Transistors
- Fabrication of color-stable organic light-emitting devices by utilizing incomplete energy transform
- Study of the electron properties by persistent photoconductive measurement in Ga_xIn_N_yAs_