Thorough Diagnoses of the Impact of Flash Memory Cell UV-State Threshold Voltage on the Cell Reliability and Program/Erase Cycling Endurance Performance
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Tzeng Tzeng-wen
Td2 Device Department Powerchip Semiconductor Corp.
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Tzeng Shyang-ming
Td2 Device Department Powerchip Semiconductor Corp.
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Wong Wei-zhe
Td2 Device Department Powerchip Semiconductor Corp.
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Lai Chia-ping
Td2 Device Department Powerchip Semiconductor Corp.
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Kuo Victo
Td2 Device Department Powerchip Semiconductor Corp.
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Huang Yih-en
Td2 Device Department Powerchip Semiconductor Corp.
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Chu Chih-hsun
Psc
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Yang Ching-sung
Td2 Device Department Powerchip Semiconductor Corp.
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KUO Victo
TD2, Device Department, Powerchip Semiconductor Corp.
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HWANG Hann-Ping
TD2, Device Department, Powerchip Semiconductor Corp.
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HUANG Cheng-Tung
PSC
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CHOU Cih-Wen
PSC
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TZENG Shyang-Ming
TD2, Device Department, Powerchip Semiconductor Corp.
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LAI Chia-Ping
TD2, Device Department, Powerchip Semiconductor Corp.
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TZENG Tzeng-Wen
TD2, Device Department, Powerchip Semiconductor Corp.
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HUANG Yih-En
TD2, Device Department, Powerchip Semiconductor Corp.
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WONG Wei-Zhe
TD2, Device Department, Powerchip Semiconductor Corp.
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YANG Ching-Sung
TD2, Device Department, Powerchip Semiconductor Corp.
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PITTIKOUN Saysamone
TD2, Device Department, Powerchip Semiconductor Corp.
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Hwang Hann-ping
Td2 Device Department Powerchip Semiconductor Corp.
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Pittikoun Saysamone
Td2 Device Department Powerchip Semiconductor Corp.
関連論文
- Flash EEPROM Tunneling Oxide Reliability Characterization under the test of FN Constant Current Stress and Program/Erase Cycling by using ISSG Nitrided Oxide
- Thorough Diagnoses of the Impact of Flash Memory Cell UV-State Threshold Voltage on the Cell Reliability and Program/Erase Cycling Endurance Performance