Flash EEPROM Tunneling Oxide Reliability Characterization under the test of FN Constant Current Stress and Program/Erase Cycling by using ISSG Nitrided Oxide
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Chou Jih-wen
Ememory Technology Incorporation
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Tzeng Tzeng-wen
Td2 Device Department Powerchip Semiconductor Corp.
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Tzeng Shyang-ming
Td2 Device Department Powerchip Semiconductor Corp.
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Wong Wei-zhe
Td2 Device Department Powerchip Semiconductor Corp.
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KUO Chao-Wei
Powerchip Semiconductor Corporation
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HUANG Cheng-Tung
Ememory Technology Incorporation
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TZENG Shyang-Ming
Powerchip Semiconductor Corporation
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LAI Chia-Ping
Powerchip Semiconductor Corporation
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TZENG Tzeng-Wen
Powerchip Semiconductor Corporation
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LIU Chi-Lun
Powerchip Semiconductor Corporation
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HUANG Yih-En
Powerchip Semiconductor Corporation
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WONG Wei-Zhe
Powerchip Semiconductor Corporation
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CHANG Hsiang-Chung
Ememory Technology Incorporation
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YANG Ching-Sung
Powerchip Semiconductor Corporation
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PITTIKOUN Saysamone
Powerchip Semiconductor Corporation
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CHU Chih-Hsun
Ememory Technology Incorporation
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CHO Chih-Chen
Powerchip Semiconductor Corporation
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Lai Chia-ping
Td2 Device Department Powerchip Semiconductor Corp.
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Huang Yih-en
Td2 Device Department Powerchip Semiconductor Corp.
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Chu Chih-hsun
Psc
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Yang Ching-sung
Td2 Device Department Powerchip Semiconductor Corp.
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HUANG Cheng-Tung
PSC
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PITTIKOUN Saysamone
TD2, Device Department, Powerchip Semiconductor Corp.
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Pittikoun Saysamone
Td2 Device Department Powerchip Semiconductor Corp.
関連論文
- Flash EEPROM Tunneling Oxide Reliability Characterization under the test of FN Constant Current Stress and Program/Erase Cycling by using ISSG Nitrided Oxide
- Thorough Diagnoses of the Impact of Flash Memory Cell UV-State Threshold Voltage on the Cell Reliability and Program/Erase Cycling Endurance Performance