Gate Stack Integration of Germanium Oxynitride for Germanium MOSFETs
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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SCHOLZ Roland
Max-Planck-Institutfiir Mikrostrukrurphysik Halle
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Woo Jason
Univ. Of California Los Angeles Dept. Of Electrical Engineering School Of Eng.
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Chao Yu-lin
Univ. Of California Los Angeles Dept. Of Electrical Engineering School Of Eng.
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Scholz Roland
Max-planck Institute Of Microstructure Physics
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- Gate Stack Integration of Germanium Oxynitride for Germanium MOSFETs
- Fabrication and characteristics of Germanium-on-Insulator