A Novel Explanation of Substrate Bias Dependent Dielectric Breakdown Behavior with Channel Quantization Effect in Ultrathin Oxide pMOSFETs
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
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Huang-lu S.
Central Research And Development Division Umc
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You J.
Central Research And Development Division Umc
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Chiang Sinclair
Central Research And Development Division Umc
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LU C.
Central Research and Development Division, UMC
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LU M.
Central Research and Development Division, UMC
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CHIEN S.
Central Research and Development Division, UMC
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Chien S.
Central Research And Development Division Umc
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Lu M.
Central Research And Development Division Umc
関連論文
- A Novel Explanation of Power-Law Model with Quantitative Hydrogen Mechanism for Ultra-Thin Oxide Breakdown
- A Novel Explanation of Substrate Bias Dependent Dielectric Breakdown Behavior with Channel Quantization Effect in Ultrathin Oxide pMOSFETs
- Si Substrate Orientation Induced Worse Hot Carrier Degradation in Novel (110)/ Oriented Devices