Si Substrate Orientation Induced Worse Hot Carrier Degradation in Novel (110)/<111'> Oriented Devices
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Huang-lu S.
Central Research And Development Division Umc
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Chiang Sinclair
Central Research And Development Division Umc
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LU M.
Central Research and Development Division, UMC
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CHIEN S.
Central Research and Development Division, UMC
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LIU Y.
Central Research and Development Division, UMC
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SHIAU W.
Central Research and Development Division, UMC
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Chien S.
Central Research And Development Division Umc
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Shiau W.
Central Research And Development Division Umc
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Lu M.
Central Research And Development Division Umc
関連論文
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- A Novel Explanation of Substrate Bias Dependent Dielectric Breakdown Behavior with Channel Quantization Effect in Ultrathin Oxide pMOSFETs
- Si Substrate Orientation Induced Worse Hot Carrier Degradation in Novel (110)/ Oriented Devices