Excellent Ferroelectric Properties in PZT Capacitor Cell with Thin SRO Film in Both Top and Bottom Electrodes
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Kumura Y.
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
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Arisumi O.
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
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MORIMOTO T.
Microelectronics Engineering Laboratory, Toshiba Corporation, Semiconductor company
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HIDAKA O.
Microelectronics Engineering Laboratory, Toshiba Corporation, Semiconductor company
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YAMAKAWA K.
Microelectronics Engineering Laboratory, Toshiba Corporation, Semiconductor company
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KANAYA H.
Microelectronics Engineering Laboratory, Toshiba Corporation, Semiconductor company
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IWAMOTO T.
Corporate Manufacturing Engineering Center, Toshiba Corporation
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KUNISHIMA I.
Microelectronics Engineering Laboratory, Toshiba Corporation, Semiconductor company
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TANAKA S.
Microelectronics Engineering Laboratory, Toshiba Corporation, Semiconductor company
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Kunishima I.
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
関連論文
- Excellent Ferroelectric Properties in PZT Capacitor Cell with Thin SRO Film in Both Top and Bottom Electrodes
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