Latent Damage Generation in Submicrometer MOS Devices Under High-Field Impulse Stressing and Its Characterization Using Flicker Noise Measurement
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Chim W.
Centre For Integrated Circuit Failure Analysis And Reliability Faculty Of Engineering National Unive
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Teh G.
Centre For Integrated Circuit Failure Analysis And Reliability Faculty Of Engineering National Unive
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LIM P.
Centre for Integrated Circuit Failure Analysis and Reliability, Faculty of Engineering National Univ
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YEO B.
Centre for Integrated Circuit Failure Analysis and Reliability, Faculty of Engineering National Univ
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CHAN D.
Centre for Integrated Circuit Failure Analysis and Reliability, Faculty of Engineering National Univ
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Yeo B.
Centre For Integrated Circuit Failure Analysis And Reliability Faculty Of Engineering National Unive