Hydrogenated Amorphous Silicon Thin Film Transistor Fabricated on Glass and Polyimide Substrate at 200℃
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-03-30
著者
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Huang Jung-jie
Display Technology Center Industrial Technology Research Institute (dtc/itri)
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LEE Min-Hung
Display Technology Center, Industrial Technology Research Institute (DTC/ITRI)
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TSAI Cheng-Ju
Display Technology Center, Industrial Technology Research Institute (DTC/ITRI)
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YEH Yung-Hui
Display Technology Center, Industrial Technology Research Institute (DTC/ITRI)
関連論文
- Hydrogenated Amorphous Silicon Thin Film Transistor Fabricated on Glass and Polyimide Substrate at 200℃
- Hydrogenated amorphous silicon thin film transistor fabricated on glass and polyimide substrate at 200℃ (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and related materials)