Pulsed Green-Laser Annealing for Single-Crystalline Silicon Film Transferred onto Silicon wafer and Non-alkaline Glass by Hydrogen-Induced Exfoliation
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-01-15
著者
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Yamamoto Naoya
Products Development Center Ishikawajima-harima Heavy Industries Co. Ltd.
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KAWAGUCHI Norihito
Products Development Center, Ishikawajima-Harima Heavy Industries Co., Ltd.
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KAWAKAMI Ryusuke
Products Development Center, Ishikawajima-Harima Heavy Industries Co., Ltd.
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NISHIDA Ken-ichiro
Products Development Center, Ishikawajima-Harima Heavy Industries Co., Ltd.
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MASAKI Miyuki
Products Development Center, Ishikawajima-Harima Heavy Industries Co., Ltd.
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YOSHINOUCHI Atsushi
Products Development Center, Ishikawajima-Harima Heavy Industries Co., Ltd.
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Masaki Miyuki
Ihi Corporation
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KAWAGUCHI Norihito
IHI Corporation
関連論文
- Pulsed Green-Laser Annealing for Single-Crystalline Silicon Film Transferred onto Silicon wafer and Non-alkaline Glass by Hydrogen-Induced Exfoliation
- A method for an intracavity green laser with high-pulse-energy operation
- Pulsed Green-Laser Annealing for Single-Crystalline Silicon Film Transferred onto Silicon wafer and Non-alkaline Glass by Hydrogen-Induced Exfoliation
- Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing