Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-02-15

著者

• ARAKI Masahiro

  Graduate School of Science and Engineering, Yamaguchi University

• MOCHIMIZO Noriaki

  Graduate School of Science and Engineering, Yamaguchi University

• HOSHINO Katsuyuki

  Graduate School of Science and Engineering, Yamaguchi University

• TADATOMO Kazuyuki

  Graduate School of Science and Engineering, Yamaguchi University

関連論文

• Direct Growth of a-Plane GaN on r-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy
• Greater Effectiveness of ε-Viniferin in Red Wine Than Its Monomer Resveratrol for Inhibiting Vascular Smooth Muscle Cell Proliferation and Migration
• Effect of Misorientation Angle of $r$-Plane Sapphire Substrate on $a$-Plane GaN Grown by Metalorganic Vapor Phase Epitaxy
• Direct Growth of $a$-Plane GaN on $r$-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

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