Impacts of Gate Recess and Passivation on AlGaN/GaN High Electron Mobility Transistors

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概要

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• In this study, the impacts of gate recess and passivation on AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The trap-related characteristics were studied in detail by several different measurements including dc current–voltage, current collapse, gate lag, and flicker noise characterizations. With a Cl2/Ar-recessed gate, drain current collapse factors ($\Delta I_{\text{max}}$) of ${\sim}37.5$ and ${\sim}6.9$% were observed before and after SiN passivation. The gate lag measurements showed that the lagging phenomena almost disappear with SiN passivation for both Cl2- and Cl2/Ar-recessed devices. However, the flicker noise measurements revealed distinct noise levels of devices with different processes even after passivation. As the gate voltage ($V_{\text{G}}$) changed from 2 to $-4$ V, the devices recessed by Cl2 exhibited lower drain noise current densities ($S_{\text{ID}}/I_{\text{D}}{}^{2}$ ranging from $2.8\times 10^{-14}$ to $1.7\times 10^{-12}$ Hz-1 at 1 kHz) than those etched by Cl2/Ar mixture gas ($S_{\text{ID}}/I_{\text{D}}{}^{2}$ ranging from $6.3\times 10^{-14}$ to $6.0\times 10^{-12}$ Hz-1 at 1 kHz), whereas the devices without the recess process showed the lowest noise levels ($S_{\text{ID}}/I_{\text{D}}{}^{2}$ ranging from $2.8\times 10^{-15}$ to $1.3\times 10^{-13}$ Hz-1 at 1 kHz). It was found that $S_{\text{ID}}/I_{\text{D}}{}^{2}$ increased monotonically when $V_{\text{G}}$ changed from 2 to $-4$ V. A bias dependence of the $1/ f^{\gamma}$ slope $\gamma$ was observed, and a relatively large variation in the range of ${\sim}1.1$ to 1.6 was found for devices recessed by Cl2/Ar mixture gas. The number fluctuation model was employed to explain the observed trends. The results also indicated that the surface traps play an important role in these devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-02-15

著者

• Hsu Shawn

  Institute Of Electronics Engineering National Tsing Hua University

• Lin Yu-syuan

  Institute Of Electronics Engineering National Tsing Hua University

• Chan Chih-Yuan

  Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan

• Lee Ting-Chi

  Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute, Hsinc

• Chen Leaf

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan

• Chen Leaf

  Department Of Electronics Engineering National Chiao Tung University

• Lee Ting-chi

  Electronics And Optoelectronics Research Laboratory Industrial Technology Research Institute

• Chan Chih-yuan

  Institute Of Electronics Engineering National Tsing Hua University

関連論文

• Layout Optimization of AlGaN/GaN HEMTs for High-power Applications
• Impacts of Gate Recess and Passivation on AlGaN/GaN High Electron Mobility Transistors

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