マグネトロンスパッタ法によるTiO_2薄膜の紫外光照射に伴う光触媒効果ならびに電気抵抗率の減少

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In this paper, the authors clarified effects of photocatalysis and decrease of electrical resistivity under UV irradiation on TiO2 thin films prepared under Ar+O2 atmosphere by RF magnetron sputtering method. From the result of XRD, thin films prepared under Ar+10˜50%O2 atmosphere formed structure of anatase, and films with structures of anatase and rutile were formed under Ar+60˜80%O2 atmosphere. For TiO2 thin films prepared at gas pressure of 3.0 Pa under Ar+40%O2 atmosphere, contact angle for water showed 9°under UV irradiation for 240 min. and decomposition rate of methylene blue showed -0.067 under UV irradiation for 120 min. Therefore, photocatalytic activity was the most excellent at gas pressure of 3.0 Pa under Ar+40%O2 atmosphere. Moreover, it revealed that electrical resistivity ρ for TiO2 thin films prepared under the same conditions changed from 8.0×103 Ω·m to 2.0×10-2 Ω·m under UV irradiation for 60 min. It clarified that effects of photocatalysis and decrease of electrical resistivity are considerably influenced by gas pressure in preparing TiO2 thin films.
2006-05-01