0.86eV Platinum Schottky Barrier on Indium Phosphide by In-Situ Electrochemical Process and Its Application to MESFETs
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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HASEGAWA H.
Department of Oral Pathology, Matsumoto Dental University School of Dentistry
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UNO S.
Department of Internal Medicine and Molecular Science, Graduate School of Medicine, Osaka University
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HASHIZUME T.
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University
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KASAI S.
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University
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WU N.-J.
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University
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Wu N.-j.
Department Of Electrical Engineering And Research Center For Interface Quantum Electronics Hokkaido University
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