Back-Gate Effects of Amorphous-Si TFTs with an Inorganic Black Matrix on Array
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Kato Yoshimine
Ibm Japan Yamato Lab.
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Kato Yoshimine
Display Technology Ibm Japan
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MIYOSHI Yuki
Display Technology, IBM Japan
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ATSUMI Masakazu
Display Technology, IBM Japan
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KAIDA Yoshimasa
Display Technology, IBM Japan
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Atsumi Masakazu
Display Technology Ibm Japan
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MIY0SHI Yuichi
Kyoto Research Laboratory, Matsushita Electronics Corporation
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Miyoshi Y
Kyoto Research Laboratory Matsushita Electronics Corporation
関連論文
- Characteristics of a-Si Thin-Film Transistors with an Inorganic Black Matrix on the Top (Special Issue on Liquid-Crystal Displays)
- Back-Gate Effects of Amorphous-Si TFTs with an Inorganic Black Matrix on Array
- Particle Growth Caused by Film Deposition in VLSI Manufacturing Process (Special Issue on Scientific ULSI Manufacturing Technology)
- a-SiGe:H and a-SiGeC:H black-matrix films for Liquid Crystal Displays