Improvement of Breakdown Voltage in SOI MOSFET Using Gate-Recess (GR) Structure
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-08-21
著者
-
Park Young-june
Dept. Of Electronics Eng. And Inter-university Semiconductor Research Center Seoul National Universi
-
Choi Jin-hyeok
Dept. Of Electronics Eng. And Inter-university Semiconductor Research Center Seoul National Universi
-
Min Hong-Shick
Dept. of Electronics Eng. and Inter-University Semiconductor Research Center Seoul National Universi
-
Min Hong-shick
Dept. Of Electronics Eng. And Inter-university Semiconductor Research Center Seoul National Universi
-
Park Young-june
Dept. Of Electronics Eng. And Inter-university Semiconductor Research Center Seoul National Universi
関連論文
- V_-V_ Scaling for Low Power CMOS Circuit
- Improvement of Breakdown Voltage in SOI MOSFET Using Gate-Recess (GR) Structure