"H_2O-TOP-PECVD" : A New Plasma Enhanced CVD Technology Using Alternate TEOS-Ozone Low Pressure CVD and H_2O Assisted O_3 Plasma Treatment

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Homma Tetsuya

  Nec Corporation Ulsi Device Development Laboratories

• KISHIMOTO Koji

  NEC Corporation, ULSI Device Development Laboratories

• IMAOKA Kou

  Applied Materials Japan, Inc.

• KOYANAGI Ken-ichi

  NEC Corporation, ULSI Device Development Laboratories

• Kishimoto Koji

  Nec Corporation Ulsi Device Development Laboratories

• Imaoka Kou

  Applied Materials Japan Inc.

• Koyanagi Ken-ichi

  Nec Corporation Ulsi Device Development Laboratories

関連論文

• "H_2O-TOP-PECVD" : A New Plasma Enhanced CVD Technology Using Alternate TEOS-Ozone Low Pressure CVD and H_2O Assisted O_3 Plasma Treatment
• A Reliable Double Level Interconnection Technology for Giga Bit DRAMs Using SiO_2 Mask Al Etching and PECVD SiOF

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