Local Atomic Bonding in Fluorinated Silicon Oxides : Static Dielectric Constant and Chemical Stability
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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LUCOVSKY Gerald
North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elec
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Lucovsky Gerald
North Carolina State University Departments Of Physics Materials Science And Engineering And Electri
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YANG Hang-Yang
North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elec
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Yang Hang-yang
North Carolina State University Departments Of Physics Materials Science And Engineering And Electri
関連論文
- Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures : Applications to MOS Devices
- Controlled Nitrogen Incorporation at Si-SiO_2 Interfaces by Remote Plasma-Assisted Processing
- Local Atomic Bonding in Fluorinated Silicon Oxides : Static Dielectric Constant and Chemical Stability