LUCOVSKY Gerald | North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elec
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概要
- 同名の論文著者
- North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elecの論文著者
関連著者
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LUCOVSKY Gerald
North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elec
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Lucovsky Gerald
North Carolina State University Departments Of Physics Materials Science And Engineering And Electri
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Niimi H
Hokkaido Univ. Sapporo Jpn
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NIIMI Hiro
North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elec
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Lucovsky G
Departments Of Physics And Electrical And Computer Engineering North Carolina State University
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Parker Chris
Department Of Electrical And Computer Engineering North Carolina State University
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Hattangady Sunil
Department Of Materials Science And Engineering North Carolina State University
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Lee David
Department Of Materials Science And Engineering North Carolina State University
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Hauser John
Department Of Electrical And Computer Engineering North Carolina State University
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Komine Kenji
Advanced Technology Research Laboratory Meidensha Corporation
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LEE David
North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elec
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HATTANGADY Sunil
North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elec
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PARKER Chris
North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elec
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HAUSER John
North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elec
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KOH Kwangok
North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elec
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YANG Hang-Yang
North Carolina State University, Departments of Physics, Materials Science and Engineering, and Elec
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Yang Hang-yang
North Carolina State University Departments Of Physics Materials Science And Engineering And Electri
著作論文
- Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures : Applications to MOS Devices
- Controlled Nitrogen Incorporation at Si-SiO_2 Interfaces by Remote Plasma-Assisted Processing
- Local Atomic Bonding in Fluorinated Silicon Oxides : Static Dielectric Constant and Chemical Stability