Two-Dimensional Analytical Subthreshold Model and Optimal Scaling of Fully-Depleted SOI MOSFET Down to 0.1μm Channel Length
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Pidin S.
Department Of Machine Intelligence And System Engineering Faculty Of Engineering Tohoku University
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Koyanagi M.
Department Of Bioengineering And Robotics Tohoku University
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Koyanagi M.
Department Of Machine Intelligence And System Engineering Faculty Of Engineering Tohoku University
関連論文
- Characteristics of Silicon-on-Low-K Insulator (SOLK) MOSFET with Metal Back-Gate
- Ultra-Shallow Junotion Formation by AsH3 Adsorption Method
- High Speed and Low Voltage Operation of CMOS Inverters Using SOI-MOSFET with Body Terminal
- Two-Dimensional Analytical Subthreshold Model and Optimal Scaling of Fully-Depleted SOI MOSFET Down to 0.1μm Channel Length
- An Accurate Impact Ionization Current Model for LDD SOI MOSFETs
- New MOS Current Mode Logic Using SOI-MOSFET with Body Terminal